BLM2312 pb free product n-channel enhancement mode power mosfet description the BLM2312 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a battery protection or in ot her switching application. general features v ds = 20v,i d = 4.5a r ds(on) < 40m ? @ v gs =2.5v r ds(on) < 33m ? @ v gs =4.5v high power and current handing capability lead free product is acquired surface mount package application battery protection load switch power management d g s schematic diagram marking and pin assignment sot-23 top view package marking and ordering information device marking device device package reel size tape width quantity 2312 BLM2312 sot-23 ?180mm 8 mm 3000 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v t a =25 4.5 continuous drain current t a =70 i d 3.6 a drain current-pulsed (note 1) i dm 13.5 a maximum power dissipation p d 1.25 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characteristic thermal resistance,junction-to-ambient (note 2) r ja 100 /w electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 20 22 - v page1 www.belling.com.cn v2.0
pb free product zero gate voltage drain current i dss v ds =20v,v gs =0v - - 1 a gate-body leakage current i gss v gs =12v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.5 0.65 1.2 v v gs =2.5v, i d =4.0 a - 33 40 m ? drain-source on-state resistance r ds(on) v gs =4.5v, i d =4.5a - 22 33 m ? forward transconductance g fs v ds =10v,i d =4a - 10 - s dynamic characteristics (note4) input capacitance c lss - 500 - pf output capacitance c oss - 300 - pf reverse transfer capacitance c rss v ds =8v,v gs =0v, f=1.0mhz - 140 - pf switching characteristics (note 4) turn-on delay time t d(on) - 20 40 ns turn-on rise time t r - 18 40 ns turn-off delay time t d(off) - 60 108 ns turn-off fall time t f v dd =10v,i d =1a v gs =4.5v,r gen =6 ? - 28 56 ns total gate charge q g - 10 15 nc gate-source charge q gs - 2.3 - nc gate-drain charge q gd v ds =10v,i d =3a,v gs =4.5v - 2.9 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =1a - - 1.2 v diode forward current (note 2) i s - - 1 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production BLM2312 page2 www.belling.com.cn v2.0
pb free product typical electrical and thermal characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit t j -junction temperature( ) figure 3 power dissipation vds drain-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms t j -junction temperature( ) figure 4 drain current i d - drain current (a) figure 6 drain-source on-resistance p d power(w) i d - drain current (a rdson on-resistance(m ) i d - drain current (a) BLM2312 page3 www.belling.com.cn v2.0
pb free product vgs gate-source voltage (v) figure 7 transfer characteristics vgs gate-source voltage (v) figure 9 rdson vs vgs qg gate charge (nc) figure 11 gate charge t j -junction temperature( ) figure 8 drain-source on-resistance vds drain-source voltage (v) figure 10 capacitance vs vds vsd source-drain voltage (v) figure 12 source- drain diode forward i d - drain current (a) rdson on-resistance(m ) vgs gate-source voltage (v) normalized on-resistance c capacitance (pf) i s - reverse drain current (a) BLM2312 page4 www.belling.com.cn v2.0
pb free product vds drain-source voltage (v) figure 13 safe operation area square wave pluse duration(sec) figure 14 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance i d - drain current (a) BLM2312 page5 www.belling.com.cn v2.0
pb free product sot-23 package information dimensions in millimeters symbol min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8 notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. BLM2312 page6 www.belling.com.cn v2.0
|
